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| NTE2570 (NPN) & NTE2571 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector-Emitter Saturation Voltage D High Current Capacity Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Gain-Bandwidth Product Collector-Emitter Saturation Voltage NTE2570 NTE2571 Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IC = 1mA, IC = 0 Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = Symbol ICBO IEBO hFE fT VCE(sat) IC = 5A, IB = 10mA - - 90 80 6 - - - - - 0.4 0.5 - - - V V V V V Test Conditions VCB = 80V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 4A VCE = 5V, IC = 1A Min - - 100 30 - Typ - - - - 20 Max 0.1 3.0 280 - - MHz Unit mA mA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Turn-On Time NTE2570 NTE2571 Storage Time NTE2570 NTE2571 Fall Time NTE2570 NTE2571 tf tstg Symbol ton Test Conditions VCC = 50V, VBE = -5V, 10IB1 = -10IB2 = IC = 2A, Pulse Width = 20s Duty Cycle 1% Min - - - - - - Typ 0.1 0.2 1.6 0.7 0.4 0.2 Max - - - - - - Unit s s s s s s Note 1. For NTE2571, the polarity is reversed. .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2) .173 (4.4) Max .114 (2.9) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated |
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